Implantation of 10MeV helium and 120MeV neon was used for the local lifetime control of silicon power diodes, with subsequent annealing at 200C. Deep-level transient spectroscopic measurements showed that the concentration ratio of VO(–/0) pairs and divacancies V2(-/0) following neon implantation was in close agreement with published data for other heavy ions. The implantation dose required to achieve the same effect was about 10 times lower for neon as compared with helium. The radiation-enhanced diffusion of platinum at 725C was evaluated with respect to the implantation of helium and neon. An order-of-magnitude lower implantation dose of neon as compared with helium was found to be necessary to obtain the same improvement in electrical parameters. The radiation-enhanced diffusion of Pt, using neon implantation, was found to behave in a similar manner to that of helium.

Neon Implantation and the Radiation Enhanced Diffusion of Platinum for the Local Lifetime Control in High-Power Silicon Diodes. J.Vobecký, V.Záhlava, A.Denker, V.Komarnitskyy: Nuclear Instruments and Methods in Physics Research Section B, 2009, 267[17], 2832-8