It was revealed that self-interstitials formed under low intensity electron irradiation in high resistivity p-type silicon could be retained frozen up to room temperature. Low thermal mobility of the self-interstitials suggested that Frenkel pairs in silicon could be stable at about, or higher than, 100K. A broad DLTS peak with an activation energy of 0.14 to 0.17eV could be identified as being related to Frenkel pairs. This peak annealed out at 120 to 140K. Experimental evidences were presented that becoming more mobile under forward current injection the self-interstitials changed their charge state to a less positive one.

Primary Defect Transformations in High-Resistivity p-Type Silicon Irradiated with Electrons at Cryogenic Temperatures. L.F.Makarenko, S.B.Lastovski, F.P.Korshunov, L.I.Murin, M.Moll: Physica B, 2009, 404[23-24], 4561-4