Defect-impurity complexes with high thermal stability which were generated after high temperature annealing of silicon n+-p diodes irradiated with 4MeV electrons at 300K were studied by means of deep level transient spectroscopy. Such defects were of interest because of their possible application in controlling the carrier lifetime in silicon power devices. The parameters of four deep level traps were determined and compared with the results of photoluminescence studies on thermal stability of electron-irradiation-induced defects. A donor like trap with an energy level at Ev+0.39eV was assigned to a complex incorporating an interstitial carbon atom and two oxygen atoms (CiO2i), which gave rise to the P-line (hν=0.767eV) in photoluminescence spectra.

Defect-Impurity Complexes with High Thermal Stability in Epi-Si n+-p Diodes Irradiated with MeV Electrons. F.P.Korshunov, S.B.Lastovskii, V.P.Markevich, L.I.Murin, Y.V.Bogatyrev, A.R.Peaker: Vacuum, 2009, 83[1], S131-3