The effect of irradiating n-type crystals during bombardment with electrons was studied. Samples bombarded with 2MeV electrons were subjected to isochronous annealing at 200 to 600C. After each 1200s annealing cycle, the electron concentration was measured, using the Hall method, at 77 to 300K. It was shown that, if the E centers were excited during irradiation with photons (energy = 0.44eV, wavelength = 2.8μm), phosphorus-containing defects of PV2 type were formed in the n-Si crystals. This led to an increase in the radiation resistance of the crystals. If negative vacancies were excited with photons (energy = 0.28eV, wavelength = 4.4μm), the total number of radiation defects increased by a factor of 1.2.

The Influence of the Energy of Photoexcitation in the Course of Electron Irradiation on Defect Formation in n-Si Crystals. T.A.Pagava, N.I.Maisuradze: Semiconductors, 2009, 43[6], 721-5