The formation processes of vacancy-oxygen (VO) and carbon interstitial-oxygen interstitial (CiOi) complexes in electron-irradiated Czochralski-grown Si crystals, also doped with Ge, were investigated. Infra-red spectroscopy was used to monitor the production of the defects. In Czochralski-grown Si with carbon concentrations [Cs] of up to 1017/cm3 and Ge concentrations [Ge] of up to 1020/cm3, the production rate of VO defects as well as the rate of oxygen loss exhibited a slight growth (about 10%) with increasing Ge concentration. At concentrations of carbon [Cs] of around 2 x 1017/cm3, the production rate of VO defects became larger by ~40% in Czochralski-grown Si:Ge at Ge concentrations of around 1019/cm3.

Radiation-Induced Defects in Czochralski-Grown Silicon Containing Carbon and Germanium. C.A.Londos, A.Andrianakis, V.V.Emtsev, H.Ohyama: Semiconductor Science and Technology, 2009, 24[7], 075002