The electronic properties of defects introduced unintentionally, during electron beam deposition of Ti and Mo on Czochralski-grown, B-doped Si and those deliberately introduced by proton and electron irradiation were presented. Deep-level transient spectroscopy studies on the samples revealed the following primary hole traps at 0.32eV and 0.54eV above the valence band after electron beam deposition processing, 0.15eV, 0.32eV after proton irradiation and 0.17eV, 0.23eV, 0.33eV and 0.60eV after electron irradiation. The comparison of the defect levels showed one common defect level at 0.32eV above the valence band in the three radiation processed samples, and this hole trap was boron-related. Most of the defect levels, created in these three samples, were not similar. Higher defect introduction rates were recorded for the proton when compared to the electron irradiation induced primary deep level states.

A Comparative Study of Electronic Properties of the Defects Introduced in p-Si - (i) during Electron Beam Deposition of Ti/Mo, (ii) by Proton Irradiation, and (iii) by Electron Irradiation. A.G.M.Das, C.Nyamhere, F.D.Auret, M.Hayes: Surface and Coatings Technology, 2009, 203[17-18], 2628-31