The defects in a Si wafer bombarded with Si ions were studied by using a transmission electron microscopy. The Si (100) samples were implanted with 1MeV Si ions to fluences from 5 x 1014 to 1016/cm2. After implantation, the samples were annealed from 400 to 1000C for 30min. A damaged layer was observed in the as-implanted sample. However, a continuous and amorphous buried-layer was fully formed at a fluence of 2 x 1015/cm2. The amorphous layer was about 1.0μm from the surface and was about 0.3–0.7μm in width. It should be noted that no obvious defects were observed in the region between the surface and the buried-layer for the as-implanted sample. In addition, it was found that the retained defects were transferred from the isotropic dislocation loops to anisotropic dislocations if the amorphous layer saturation.

A TEM Investigation of Retained Defects in Si Wafer by 1MeV Si Ions Bombardment. J.Y.Hsu, R.T.Huang, M.J.Hung, Y.C.Yu: Nuclear Instruments and Methods in Physics Research B, 2010, 268[11-12], 2193-6