Samples of epitaxially grown n-type Si were implanted with low doses (<109/cm2) of He, C, Si, and I ions using energies from 2.75 to 48MeV. Deep-level transient spectroscopic analysis of the implanted samples revealed a stronger signal for the signature of the singly negative charge state of the divacancy (V2(–/0)) as compared to that of the doubly negative charge state of the divacancy (V2(=/–)). Isochronal annealing for 20min ranging from 150 to 400C results in a gradual decrease in the deep-level transient spectroscopy peak amplitude of the V2(–/0) signature, accompanied by an increase in the peak amplitudes of both the vacancy oxygen pair and the V2(=/–) levels, as well as an increase in the carrier capture rates for the levels. A model based on local compensation of charge carriers from individual ion tracks was proposed in order to explain the results, involving two fractions of V2: (1) V2 centers localized in regions with high defect density around the ion track (V2dense) and (2) V2 centers located in regions with a low defect density (V2dilute).

Formation and Annealing Behavior of Prominent Point Defects in MeV Ion Implanted n-Type Epitaxial Si. L.Vines, E.V.Monakhov, J.Jensen, A.Y.Kuznetsov, B.G.Svensson: Materials Science and Engineering B, 2009, 159-160, 177-81