A systematic comparison was made of the effects of He implantation upon c-Si and poly-Si. Interesting and significant differences were observed in the defect morphology in the two cases. Results on the differences between the two materials were presented and discussed in terms of the role that grain boundaries in poly-Si played in trapping interstitials and the effects that this may have on the overall defect morphology.

A Study of Defect Evolution in Multi-Energy Helium Implanted Monocrystalline and Polycrystalline Silicon. K.J.Abrams, S.E.Donnelly, M.F.Beaufort, J.Terry, L.I.Haworth, D.Alquier: Physica Status Solidi C, 2009, 6[8], 1964-8