Defect structure of Czochralski-grown (111) oriented silicon single crystals (Cz-Si), irradiated with fast neutrons (energy = 5MeV, dose = 5 x 1016/cm2) and annealed at up to 1400K, also under an hydrostatic Ar pressure of 1.1GPa, was investigated by high-resolution X-ray diffraction and synchrotron topography. The annealing, especially at 1270 and 1400K, results in precipitation of interstitial oxygen and creation of extended defects. A thermally induced oxygen precipitation at high temperatures–pressures in neutron-irradiated Cz-Si revealed the irradiation-related history of investigated samples.

Thermally Induced Defects in Silicon Irradiated with Fast Neutrons. A.Misiuk, W.Wierzchowski, K.Wieteska, P.Romanowski, J.Bak-Misiuk, M.Prujszczyk, C.A.Londos, W.Graeff: Radiation Physics and Chemistry, 2009, 78[10], S67-70