A study was made of the photoluminescence of nanostructured silicon layers that emitted radiation (1.5 to 1.6μm) due to optical transitions to deep levels of recombination centers produced by crystal lattice defects. It was shown that the dependence of the photoluminescence intensity upon the excitation power density was adequately described by a model involving deep levels of one type. A shift in the photoluminescence peak to shorter wavelengths with increasing excitation power density was observed. This shift indicated changes in the occupancy of deep levels under the conditions of transfer of charge carriers between recombination centers.

1.5–1.6 μm Photoluminescence of Silicon Layers with a High Density of Lattice Defects. A.A.Shklyaev, A.V.Latyshev, M.Ichikawa: Semiconductors, 2010, 44[4], 432-7