An investigation was made of the interface structure of directly bonded Si(011)/Si(001) substrates, prepared by conventional bonding and grind-back. The interfacial structure was analyzed using transmission electron microscopy and in-plane X-ray diffraction. The plan-view and cross-sectional transmission electron microscopic observations showed that screw dislocation lines were localized to the interfacial plane, and that threading dislocations were absent. Grazing-incidence in-plane X-ray diffraction analyses confirmed the existence of mosaic structures at the interface. These structures were formed due to the deformation field produced by the screw dislocations. This permitted a high degree of crystallinity to be retained in regions away from the interface, in both the Si(011) layer and the Si(001) wafer.

Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates. E.Toyoda, A.Sakai, H.Isogai, T.Senda, K.Izunome, K.Omote, O.Nakatsuka, S.Zaima: Japanese Journal of Applied Physics, 2009, 48[2], 021208