It was shown that dislocation-engineered p-n junctions were sensitive to variations in illumination intensity. It was found that it was possible to modulate deliberately the properties of the device structure.

Sensitivity of Dislocation Engineered Si p-n Junctions to Influence of Illumination and Ultrasound. A.S.Davletova, S.Z.Karazhanov: Inorganic Materials, 2009, 45[11], 1213