A study was made of the structures of semiconductor auto-epitaxial layers grown in the form of closed cylinders onto the external side-surface of hollow cylindrical single-crystal substrates. A comparison was made of the dislocation densities in the structure of non-planar layers deduced using single-crystal X-ray diffraction analysis (measurements of rocking curves) or by using the etch pit method in the [111] plane. The results of single-crystal X-ray diffraction analysis of non-planar auto-epitaxial silicon layers were shown to be reliable.

Single-Crystal X-ray Diffraction Analysis of Nonplanar Autoepitaxial Silicon Layers. V.T.Bublik, L.V.Kozhitov, T.T.Kondratenko: Inorganic Materials, 2009, 45[14], 1610