The 5K photoluminescence of silicon substrates in the range of 0.8 to 1.12eV before and after microwave plasma-assisted chemical vapour deposition of polycrystalline diamond films was studied. The diamond films were deposited onto the pure (ρ ~ 3kOhmcm) dislocation-free silicon treated by mechanical polishing or by the superior chemical–mechanical polishing. In the photoluminescence spectra of coated silicon substrates treated by chemical–mechanical polishing, the D1 and D2 lines related to the dislocation emission were registered. It was supposed that the formation of dislocations in the substrate was caused by a strong adhesion of diamond film and, as a consequence, by the formation of inner tensions released as dislocations.

Analysis of Photoluminescence Spectra for Detection of Stress-Induced Defects in Silicon Substrates after the Polycrystalline Diamond Film Deposition. V.S.Bagaev, D.F.Aminev, T.I.Galkina, A.Y.Klokov, V.S.Krivobok, V.G.Ralchenko: Physica B, 2009, 404[23-24], 4616-8