The influence of rapid thermal annealing on the formation of oxygen precipitates and extended defects was investigated by transmission electron microscopy in heavily and lightly boron-doped Czochralski silicon, respectively. It revealed that for the heavily doped specimen undergo rapid thermal annealing pre-annealing, there were oxygen precipitates with high density generated, accompanied with the stacking faults, while for the specimen without rapid thermal annealing pre-annealing, dislocation generated; as for the lightly doped specimen, it found that there were dislocations generated in the specimen undergo rapid thermal annealing pre-annealing, while oxygen precipitate-related dislocations generated in the specimen without rapid thermal annealing pre-annealing, respectively. The main reason was due to the enhancement of oxygen precipitation by heavy boron doping and the increment of vacancy concentration in the bulk injected into the bulk by rapid thermal annealing pre-annealing.

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon. J.Xu, W.Wang, D.Yang, H.J.Moeller: Journal of Alloys and Compounds, 2009, 478[1-2], 758-62