An experimental study was made of the electrical properties of dislocation engineered Si p–n junction before and after the influence of ultrasound waves. A study was made of current–voltage characteristics in the dark and upon illumination for forward and reverse biases before and after ultrasound processing. By fitting the theoretically established current–voltage dependence to the experimentally measured ones, the diode ideality factor and saturation current were estimated. It was found that current transport through the dislocation-engineered Si p–n junction could be controlled by generation-recombination or tunnelling recombination mechanisms. Ultrasound was found to modulate electrical properties of the dislocation engineered Si.

A Study of Electrical Properties of Dislocation Engineered Si Processed by Ultrasound. A.Davletova, S.Z.Karazhanov: Journal of Physics and Chemistry of Solids, 2009, 70[6], 989-92