Dislocation networks formed by silicon wafer bonding were studied by means of electron beam induced current and photoluminescence. The measurements were performed on p–n junction diode structures prepared by ion implantation. An electron beam induced current signal was observed not only inside the diode structure, but also far outside the diode area. This finding demonstrated the ability of the bonding interface to efficiently collect minority carriers and indicated a high electrical conductivity of the dislocation network. In addition, circular inhomogeneities of charge collection were observed. The contrast of those regions was bright at high beam energies and turned dark or vanished at lower energies. The contrast behaviour of the circular areas could be explained by local variations of collection efficiency and recombination at the dislocation network, which might be a result of different density of oxide precipitates. Photoluminescence mapping at 0.794 and 1.081eV revealed similar circular areas.

EBIC/PL Investigations of Dislocation Network Produced by Silicon Wafer Direct Bonding. G.Jia, W.Seifert, T.Mchedlidze, T.Arguirov, M.Kittler, T.Wilhelm, M.Reiche: Superlattices and Microstructures, 2009, 45[4-5], 314-20