Capabilities of light scattering tomography to study defects in silicon wafers for SOI applications were reviewed. Hardware modifications required for quantitative defect size analysis were presented together with novel calibration procedure based on HF inspection of SOI wafers. Examples of light scattering tomography sensitivity to different types of defects were demonstrated. Theoretical predictions of dislocation light scattering dependence on polarization were confirmed allowing determination of dislocation Burger's vector from light scattering tomography measurements

Characterization of Crystalline Defects in Silicon for SOI Applications by Means of Light Scattering Tomography. O.Kononchuk, V.Monier, L.Capello, B.Pichaud: Physica Status Solidi C, 2009, 6[8], 1935-41