An investigation was made of the defects in n-Si<Zn> crystal lattices using the X-ray diffractometry method in triplet-crystal combination mode. Experimental n-Si<Zn> samples were made by a high-temperature diffusion annealing of Zn with subsequent quenching. After analysis of diffusion scattering it was established, that crystal lattice Si<Zn> contained plenty defects of micron sizes. There were revealed likewise small-scale defects with sizes nearby 50nm. The type of them was admittedly chaotically distributed dislocations, but part of them may be connected with spherical clusters or dislocation loops.

Defects in Zinc Doped Silicon Studied on Base of X-Ray Diffuse Scattering Analysis. V.Privezentsev: Physica Status Solidi C, 2009, 6[8], 1897-900