A study was made, of ion-implantation technology for the fabrication of silicon light-emitting structures, based upon dislocation-related luminescence and intended for operation at wavelengths close to 1.6μm. The development of the concept of defect engineering made it possible to determine the fundamental aspects of the process of defect formation, and revealed specific features of the emission spectra related to changes in the implantation conditions of Er, Dy, Ho, O and Si ions. The conditions under which only a single type of extended structural defect (Frank loop, perfect prismatic loop, pure edge dislocation) was introduced were found. The permitted analysis of the correlation between the concentration of extended defects of a certain type, and the intensity of lines of the dislocation-related luminescence. The key role played by intrinsic point defects in the origin and transformation of extended structural defects and luminescent centers responsible for the dislocation-related luminescence was revealed. It is found that the efficiency of luminescence excitation from so-called D1 centers varied by more than two orders of magnitude between structures fabricated using different procedures.

Defect Engineering in Implantation Technology of Silicon Light-Emitting Structures with Dislocation-Related Luminescence . N.A.Sobolev: Semiconductors, 2010, 44[1], 1-23