The interactions between the 60o shuffle dislocation and two different types of vacancy defects in silicon were separately studied via the molecular dynamics simulation method. The Stillinger–Weber potential was used to describe the atomic interactions. The results showed that the dislocation slip velocity will decrease due to the interaction with the vacancy cluster (V 6). The simulation also revealed that the divacancy will be absorbed by the dislocation. Meanwhile, a climbing of the dislocation occurred during their interactions. However, the divacancy had little effect on the dislocation slip velocity. Based on the above results, the decrease in threading dislocation density in SiGe/Si heterostructures with the use of low-temperature Si buffer layer may be explained.

Computer Simulation of the Vacancy Defects Interaction with Shuffle Dislocation in Silicon. C.Li, Q.Meng: Superlattices and Microstructures, 2009, 45[1], 1-7