High-resolution depth profiling and electrical characterization were used to analyse the behaviour of As and Sb in Si substrates with and without excess vacancies. The vacancies were generated by nitrogen or oxygen ion pre-implantation before dopant (As or Sb) implantation. Separation by implanted oxygen samples were also doped and analysed. The results obtained for Si without vacancies, and for SIMOX, were similar with regard to dopant distribution, retention and electrical characteristics. Vacancy-rich samples exhibited differing electrical characteristics and redistribution behaviour during annealing. This was attributed not only to the presence of vacancies, but also to the type of ion used to create them. In the case of As-doping, oxygen pre-implanted samples had a higher larger retained dose and less As interface accumulation.

Effect of Excess Vacancy Concentration on As and Sb Doping in Si. M.Dalponte, M.C.Adam, H.I.Boudinov, L.V.Goncharova, T.Feng, E.Garfunkel, T.Gustafsson: Journal of Physics D, 2009, 42[16], 165106