The hydrogenation of deep-lying platinum layers in silicon was studies. Two methods of hydrogenation were used: radio-frequency hydrogen plasma exposure at 250C, and proton implantation. Both were followed by annealing at up to 400C. Several platinum–hydrogen complexes were identified by means of deep-level transient spectroscopy, and their annealing characteristics were determined. It was shown that proton implantation permitted the local hydrogenation of platinum atoms at the range of the implanted protons. On the other hand, platinum atoms greatly accelerated the annealing of radiation defects that were introduced by implanting protons.

Hydrogenation of Platinum Introduced in Silicon by Radiation Enhanced Diffusion. P.Hazdra, V.Komarnitskyy, V.Buršíková: Materials Science and Engineering B, 2009, 159-160, 342-5