The influence of neutron- and proton-induced cluster related defects upon the properties of n-type silicon detectors was considered. Defect concentrations were measured  by means of deep level transient spectroscopy and thermally stimulated current techniques, while the full depletion voltage and the reverse current were extracted from capacitance–voltage (C–V) and current–voltage (I–V) characteristics. The annealing behaviour of the reverse current could be correlated with the annealing of the cluster related defect levels labelled E4a and E4b by making use of their bistability. This bistability was characterised by isochronal and isothermal annealing studies and it was found that the development with increasing annealing temperature was similar to that of divacancies. This supported the assumption that E4a and E4b were vacancy-related defects. In addition an influence of the disordered regions on the shape and height of the DLTS or TSC signals was observed, corresponding to point defects such as the vacancy-oxygen complex.

Annealing Study of a Bistable Cluster Defect. A.Junkes, D.Eckstein, I.Pintilie, L.F.Makarenko, E.Fretwurst: Nuclear Instruments and Methods in Physics Research A, 2010, 612[3], 525-9