The results of investigation of micro-defects in Zn doped n-type Si by X-ray diffuse scattering method were presented. Experimental samples were made by a high-temperature diffusion annealing of Zn with subsequent quenching and tempering. The crystal lattice of the samples was found to contain spherical micro-defects of vacancy type and plane shape micro-defects of interstitial type with average radius about 0.1 and 2μm. The micro-defects average radius and their type depend on Zn doping level and thermal treatment after compensation diffusion.

Defect Structure of Zinc Doped Silicon Studied by X-ray Diffuse Scattering Method. K.D.Shcherbachev, V.V.Privezentsev: Physica B, 2009, 404[23-24], 4630-3