A model was presented for the temperature dependence of point-defect-mediated luminescence in silicon, as derived from basic kinetics and semiconductor physics and based upon the kinetics of bound exciton formation. The model provided a good fit to data for W-line electroluminescence and G-line photoluminescence in silicon.
On the Temperature Dependence of Point-Defect-Mediated Luminescence in Silicon. D.Recht, F.Capasso, M.J.Aziz: Applied Physics Letters, 2009, 94[25], 251113