The properties and behaviour of erbium- and oxygen-related complexes in Si subjected to post-implantation annealing under compressive stress were studied. It was shown that post-implantation annealing steps at 700C under hydrostatic pressures of 1GPa gave rise to the formation of new donor centers at ≈EC−190meV. The formation of other dominant Er–O-related centers remained unaltered. It was also shown that the dominant Er–O-related complexes do not interact with intrinsic point defects at room temperature, so the observed compensation of electron conductivity of Er-implanted materials by radiation-produced acceptors was mostly related to the formation of A-centers (oxygen–vacancy complexes).

Electrically Active Defects in Erbium-Implanted Silicon - Effects of Annealing under High Hydrostatic Pressures and Electron Irradiation. V.V.Emtsev, V.V.Emtsev, V.V.Kozlovskii, A.Misiuk, G.A.Oganesyan, D.S.Poloskin, N.A.Sobolev, E.A.Tropp: Materials Science and Engineering B, 2009, 159-160, 157-9