A qualitative internal stress measurement technique, involving photoluminescence spectroscopy was presented for multicrystalline silicon. This technique was based upon the stress-induced band-gap energy shift. Stress measurements were compared to defect luminescence images, which were gathered in the same measurement. The method was evaluated by stress measurements with micro-Raman spectroscopy.

Simultaneous Stress and Defect Luminescence Study on Silicon. P.Gundel, M.C.Schubert, W.Warta: Physica Status Solidi A, 2010, 207[2], 436-41