The growing curve of light-induced dangling bonds under illumination was observed for various intensities of illumination in hydrogenated polymorphous silicon. It was fitted to a stretched exponential function with two parameters, β and τ. The experimental results on the values of β and τ as functions of saturated dangling bond density, Nss, were compared with those calculated on the basis of the present model for light-induced defect creation in a-Si:H. This comparison as well as the experimental result on saturated dangling bond density as a function of generation rate of free carriers was consistent with this model

The Kinetics of Light-Induced Defect Creation in Hydrogenated Polymorphous Silicon - Stretched Exponential Relaxation. K.Morigaki, H.Hikita, K.Takeda, P.Roca i Cabarrocas: Physica Status Solidi C, 2010, 7[3-4], 692-5