Positron annihilation spectroscopy in Doppler broadening mode was used to show that inactive As and P atoms causing tensile strain in heavily doped Si epilayers were linked to vacancy-type defects. In the case of As doping, a clear increase in the average number of impurity atoms per monovacancy was observed as As concentration was increased. The effect of high temperature spike annealing on heavily As doped Si epilayers was also investigated and the vacancy-impurity complexes were shown to be very stable in most samples.

Defect Characterization of Heavily As and P Doped Si Epilayers. S.Kilpeläinen, K.Kuitunen, J.Slotte, F.Tuomisto, G.Borot, L.Rubaldo, L.Clément, R.Pantel, D.Dutartre: Physica Status Solidi C, 2009, 6[11], 2537-9