The influence of the thermal shield on temperature zones, microdefect formation and the occurrence of diameter distortion in Cz dislocation-free silicon single crystals was analyzed. Results of integrated modelling of thermal field and distributions of intrinsic point defects in the ingot shoulder and across the cylindrical body of grown silicon crystal were studied. An application of the present model of defect formation to the rapid thermal annealing of silicon wafers was shown.

Integrated Modeling and Verification of 2D Grown-In Microdefect Distributions in Cz Dislocation-Free Silicon Single Crystals. A.Prostomolotov: Physica Status Solidi C, 2009, 6[8], 1874-7