Misfit defects in a 3C-SiC/Si (001) interface were investigated using a 200 kV high-resolution electron microscope with a point resolution of 0.194nm. The [110] high-resolution electron microscopic images that do not directly reflect the crystal structure were transformed into the structure map through image deconvolution. Based on this analysis, four types of misfit dislocations at the 3C-SiC/Si (001) interface were determined. In turn, the strain relaxation mechanism was clarified through the generation of grow-in perfect misfit dislocations (including 90° Lomer dislocations and 60° shuffle dislocations) and 90° partial dislocations associated with stacking faults.

Nature of Interfacial Defects and their Roles in Strain Relaxation at Highly Lattice Mismatched 3C-SiC/Si (001) Interface. C.Wen, Y.M.Wang, W.Wan, F.H.Li, J.W.Liang, J.Zou: Journal of Applied Physics, 2009, 106[7], 073522