Reported profiles of 500C-implanted boron ions diffused in 4H-silicon carbide at 1200 to 1900, for 300s to 1.5h, were simulated using so-called dual sub-lattice modelling, in which a different diffusivity was assigned for diffusion via each sub-lattice, and a so-called semi-atomistic simulation in which silicon and carbon interstitials were regarded as being the same interstitials and silicon and carbon vacancies were regarded as being the same vacancies. Diffusion of implanted boron ions was deduced from the initial concentration profiles of interstitials and vacancies via Monte-Carlo simulations; tentatively assuming a probability of 50% that implanted boron ions would occupy carbon sub-lattices.

Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide. K.Mochizuki, H.Shimizu, N.Yokoyama: Japanese Journal of Applied Physics, 2009, 48[3], 031205