A cathodoluminescence study was made of radiation defects in silicon carbide implanted with heavy ions of Bi at high energy. Irradiated and annealed samples were measured to investigate radiation defects distribution variation with fluence. It was shown that diffusion and gettering effects occurred during irradiation. The data showed that the defect distribution depended markedly upon the irradiation ion fluence.

Far-Action Radiation Defects and Gettering Effects in 6H-SiC Irradiated with Bi Ions. D.Shustov, V.Kalinin, E.Kalinina, M.Zamoryanskaya: Physica B, 2009, 404[23-24], 4761-3