The low temperature evolution of point defects induced into SiC by ion irradiation was investigated by deep-level transient spectroscopy. The defects were introduced by irradiation with a 7.0MeV beam of C+ ions at a fluence of 6 x 109/cm2. Annealing was then performed in the temperature range of 330–400K in order to study the change in point defect structure with temperature. The low temperature annealing performed was observed to induce a change in the produced defects. The deep levels related to the Sx (EC −0.6eV) and S2 defects (EC −0.7eV) recovered with annealing while, simultaneously, a new level, S1 (EC −0.4eV), was formed. The activation energy of the S1 defect was 0.94eV, while the annealing of both the Sx and S2 levels occurred with activation energy of 0.65eV.

Low Temperature Reaction of Point Defects in Ion Irradiated 4H–SiC. G.Litrico, G.Izzo, L.Calcagno, F.La Via, G.Foti: Diamond and Related Materials, 2009, 18[1], 39-42