The electrical activities of stacking faults and partial dislocations in 4H-SiC homo-epitaxial films were investigated by using the electron-beam induced-current technique. The basal-plane dislocation was dissociated into Si 30º and C 30º partials under electron-beam irradiation, with a stacking fault between them. The stacking fault exhibited a bright contrast at room temperature and a dark contrast at 50K in electron-beam induced-current images. The C 30º partial was always more electrically active than was the Si 30º partial for each accelerating voltage.

Electrical Activities of Stacking Faults and Partial Dislocations in 4H-SiC Homoepitaxial Films. B.Chen, J.Chen, T.Sekiguchi, T.Ohyanagi, H.Matsuhata, A.Kinoshita, H.Okumura, F.Fabbri: Superlattices and Microstructures, 2009, 45[4-5], 295-300