The electrical activities of stacking faults and partial dislocations in 4H-SiC homo-epitaxial films were investigated by using the electron-beam-induced current technique. The basal plane dislocation was dissociated into Si(g) 30o and C(g) 30o partials under electron-beam irradiation, with a stacking fault formed in between. The stacking faults showed bright contrast at RT and dark contrast at 50K in electron-beam-induced current images. The reasons were discussed according to the quantum-well state of stacking faults. C(g) 30o partial was always more electrically active than Si(g) 30o partial at each specific accelerating voltage. The electron-beam-induced current contrasts of those two partials were discussed with the number of recombination centers.

Electrical Activities of Stacking Faults and Partial Dislocations in 4H-SiC Homoepitaxial Films. B.Chen, J.Chen, T.Sekiguchi, T.Ohyanagi, H.Matsuhata, A.Kinoshita, H.Okumura, F.Fabbri: Superlattices and Microstructures, 2009, 45[4-5], 295-300