Schottky barrier diodes were fabricated using high-purity semi-insulating 4H-SiC. Under certain conditions, the reverse current–voltage (IR–V) characteristics of the diodes exhibited a peak; appearing to behave as negative resistance diodes. In order to investigate the effect of intrinsic defects, in 4H-SiC, upon the IR–V characteristics, the transient reverse currents were measured. A graphical peak analysis method, discharge current transient spectroscopy (which used the isothermal transient reverse current), could then determine the densities and emission rates of defects. From simulations of the IR–V characteristics, using the densities and emission rates of intrinsic defects determined by discharge current transient spectroscopy, the effect of the intrinsic defects in high-purity semi-insulating 4H-SiC upon the IR–V characteristics of Schottky barrier diodes was found. It was concluded that discharge current transient spectroscopy was suitable for determining the densities and emission rates of electrically active defects in semi-insulating semiconductors.

Effect of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC on Reverse Current–Voltage Characteristics of Schottky Barrier Diodes. H.Matsuura, Y.Kagawa, M.Takahashi, S.Tano, T.Miyake: Japanese Journal of Applied Physics, 2009, 48[5], 056504