The isolated silicon vacancy was one of the basic intrinsic defects in SiC. New experimental data were presented, as well as new calculations on the silicon vacancy defect levels and a new model that explained the optical transitions and the magnetic resonance signals observed as occurring in the singly negative charge state of the silicon vacancy in 4H and 6H SiC.

The Silicon Vacancy in SiC. E.Janzén, A.Gali, P.Carlsson, A.Gällström, B.Magnusson, N.T.Son: Physica B, 2009, 404[22], 4354-8