A new approach to the study of the diffraction intensity distribution of single crystals with almost parallel dislocations was proposed. The method could be directly applied to realistic dislocation configurations that could be made visible as etch-pits. The displacement field was estimated by superposing the displacements that arose from all of the dislocations. The diffraction behavior on a plane which was perpendicular to these dislocations was determined by using Fourier transformation techniques.

Dislocation Arrangements Quantified by Fourier Transformation. Y.Hao, F.Mücklich, G.Petzow: Physica Status Solidi A, 1996, 158[1], 9-17