The nearest-neighbour antisite pair defects in 4H-SiC, 6H-SiC and 3C-SiC single crystals were identified using electron paramagnetic resonance spectroscopy in combination with a non-perturbative ab initio scheme for the electronic g tensor. Based on the theoretical predictions, the positively charged defect was found experimentally also in the cubic 3C-SiC polytype where it was characterized by spin 1/2 and highly anisotropic g values of gxx=2.0030, gyy=2.0241, and gzz=2.0390 within C1h symmetry. The exceptional large g values were explained by details of the spin-orbit coupling causing a strongly anisotropic quenching of the orbital angular momentum of the p-like unpaired electron

SiCCSi Antisite Pairs in SiC Identified as Paramagnetic Defects with Strongly Anisotropic Orbital Quenching. U.Gerstmann, A.P.Seitsonen, D.Ceresoli, F.Mauri, H.J.von Bardeleben, J.L.Cantin, J.G.Lopez: Physical Review B, 2010, 81[19], 195208