Non-destructive characterization of stacking faults in 4H-SiC epilayers was carried out by using photoluminescence mapping. The mapping pattern of in-grown stacking faults faded above a certain excitation intensity (8.2W/cm2) because of the supra-linear excitation power dependence of the photoluminescence emission of the stacking faults. Bar-shaped faults were identified in mappings at low temperatures. The photoluminescence intensity of the bar-shaped stacking faults decreased with increasing temperature; with an activation energy of 53meV.

Effects of Excitation Power and Temperature on Photoluminescence from Stacking Faults in 4H-SiC Epilayers. M.Nakamura, M.Yoshimoto: Japanese Journal of Applied Physics, 2010, 49[1], 010202