A transmission electron microscopic study was made of the generation of stacking faults and stacking-fault induced inclusions during 3C-SiC growth, via continuous feed physical vapour transport, on 4H-SiC substrates. A transition region of about 100nm was observed between the 4H-SiC substrate and 3C-SiC layer, where cubic and 4H-SiC sequences followed each other. A tendency to the formation of multiple stacking faults, rather than intrinsic (single) or extrinsic (double) stacking faults was observed. These rarely originated directly at the interface, but started on twin boundaries in some cases. Later during the growth process, the density of stacking faults in (111) and (¯111) gradually increased. The latter stacking-fault density was the higher; leading to the formation of large 6H-SiC inclusions which extended to great lengths.

A TEM Study of In-Grown Stacking Faults in 3C-SiC Layers Grown by CF-PVT on 4H-SiC Substrates. M.Marinova, F.Mercier, A.Mantzari, I.Galben, D.Chaussende, E.K.Polychroniadis: Physica B, 2009, 404[23-24], 4749-51