Novel in-grown stacking faults were observed in 4H-SiC epitaxial layers grown onto 4° or 8° off-cut substrates. Two different kinds of triangular stacking fault were observed in epilayers grown on 4° off-cut substrates. The faults were formed during epitaxial growth close to the episubstrate interface, and increased continuously in size during growth. Their structural and optical properties were different, as seen from the synchrotron white-beam topographic and low-temperature photoluminescence data. The luminescence spectra were similar, but appeared in different energy regions, 2.85–2.95eV and 2.48–2.64eV, which had not been observed for previously reported stacking faults. A third stacking fault was observed in 8° off-cut as-grown epilayers; sometimes with a higher density. A combination of back-polishing, etching in molten KOH and optical microscopy revealed the geometrical structure of the stacking fault within the epilayer. This fault also started close to the episubstrate interface, expanded rapidly but then changed geometry after some time and decreased in size during further growth. The optical spectrum from this fault was identical with the emission from the stacking faults previously observed only in bipolar material.

In-Grown Stacking Faults in 4H-SiC Epilayers Grown on Off-Cut Substrates. J.Hassan, A.Henry, I.G.Ivanov, J.P.Bergman: Journal of Applied Physics, 2009, 105[12], 123513