Threading dislocations and their transformation into stacking faults were observed in p-type 4H-SiC epitaxial layers by means of high-voltage transmission electron microscopy. Homo-epitaxial growth and in situ Al-doping of 4H-SiC epitaxial layers were carried out using organosilicon precursors, and the free hole concentration of the most heavily Al-doped epitaxial layers was >1021/cm3. Threading dislocations formed at the interface between the epitaxial layer and the substrate. However, the density of these threading dislocations decreased towards the epitaxial layer surface with their transformation to stacking faults.

Observation of Stacking Faults Formed during Homoepitaxial Growth of p-Type 4H-SiC. H.K.Song, J.H.Moon, H.J.Kim, M.Mehregany: Applied Physics Letters, 2009, 94[11], 112109