Epilayers of 4H-SiC were characterized using microphotoluminescence spectroscopy and microphotoluminescence intensity mapping at room temperature. A type of stacking fault with a peak emission wavelength at 480nm (2.58eV) was identified. The shape of this stacking fault was triangular as revealed by the microphotoluminescence intensity mapping. Conventional and high-resolution transmission electron microscopy were used to investigate the structure of this stacking fault. Its stacking sequence was determined to be (3,5) in the Zhdanov notation: consistent with a triple Shockley stacking fault.

Triple Shockley Type Stacking Faults in 4H-SiC Epilayers. G.Feng, J.Suda, T.Kimoto: Applied Physics Letters, 2009, 94[9], 091910