The defect creation at low energy events was studied using density functional theory molecular dynamics simulations in silicon carbide nanotubes, and the displacement threshold energies determined exhibited a dependence on sizes, which decreased with decreasing diameter of the nanotubes. The Stone–Wales defect, which was a common defect configurations induced through irradiation in nanotubes, was also investigated, and the formation energies of the Stone–Wales defects increased with increasing diameter of the nanotubes. The mean threshold energies were found to be 23 and 18eV for Si and C in armchair (5,5) nanotubes.

Stone–Wales Defects Created by Low Energy Recoils in Single-Walled Silicon Carbide Nanotubes. Z.Wang, F.Gao, J.Li, X.Zu, W.J.Weber: Journal of Applied Physics, 2009, 106[8], 084305