Models and simulation results for diffusion in strained SiGe heterostructures were presented. The present approach involved a comprehensive physically-based treatment of defect and dopant diffusion, self-diffusion (of Si and Ge) and interdiffusion; including some effects peculiar to heterostructures. The models were implemented into the framework of the atomistic kinetic Monte Carlo approach. The parameter set was calibrated over the whole composition range, from silicon to germanium, for both relaxed and strained conditions.

Atomistic Modeling of Defect Diffusion and Interdiffusion in SiGe Heterostructures. P.Castrillo, M.Jaraiz, R.Pinacho, J.E.Rubio: Thin Solid Films, 2010, 518[9], 2448-53