Lithium atoms were diffused into monocrystalline Czochralski-grown SiGe. It was shown that the diffusion coefficient exhibited an appreciable dependence upon the Ge concentration. The surface concentration of lithium in the SiGe was significantly higher than the values reported for float-zone pure silicon crystals. The Si1−xGex used here contained 2.6 or 5.4at% of germanium and had measured resistivities of 100 to 200Ωcm.

Study of Lithium Diffusion into Silicon–Germanium Crystals. A.Ruzin, N.Abrosimov, P.Litovchenko: Nuclear Instruments and Methods in Physics Research Section A, 2010, 617[1-3], 588-90